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나노 구조 물리 연구단
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Direct growth of etch pit-free GaN crystals on few-layer graphene

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Title
Direct growth of etch pit-free GaN crystals on few-layer graphene
Author(s)
Seung Jin Chae; Yong Hwan Kim; Seo, TH; Dinh Loc Duong; Lee, SM; Park, MH; Eun Sung Kim; Jung Jun Bae; Si Young Lee; Hyun Jeong; Suh, EK; Yang, CW; Mun Seok Jeong; Young Hee Lee
Publication Date
2015
Journal
RSC ADVANCES, v.5, no.2, pp.1343 - 1349
Publisher
ROYAL SOC CHEMISTRY
Abstract
We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal– organic chemical vapour deposition. Photoluminescence and Raman spectra revealed that GaN crystals grown on graphene layers had mild strain as compared to those grown on sapphire and SiO2 substrates. Etch pits were not observed on the surface of GaN/graphene, in which threading dislocations were diminished inside the bulk. This is markedly different from GaN/sapphire, in which threading dislocations were present on GaN surfaces. This opens a new possibility that graphene with p electrons and hexagonal symmetry could be an ideal substrate for GaN crystal growth instead of expensive sapphire substrates.
URI
https://pr.ibs.re.kr/handle/8788114/831
ISSN
2046-2069
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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