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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region

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Title
Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region
Author(s)
Jung B.O.; Bae S.-Y.; Sang Yun Kim; Lee S.; Jeong Yong Lee; Lee D.-S.; Kato Y.; Honda Y.; Amano H.
Publication Date
2015-01
Journal
NANO ENERGY, v.11, no., pp.294 - 303
Publisher
Elsevier BV
Abstract
Highly ordered,position-controlledgalliumnitride(GaN)nanowirebasedmultiple-quantum- wells (MQWs)core–shell architecturearraysaresynthesizedbymetalorganicchemicalvapor deposition (MOCVD).WeinvestigatethepossibilityofusingGaNnanowirearraysasabasal template forthegrowthofInxGa1xN/GaN MQWs.TheMQWsonthreedifferentcrystalfacets (c-, m-, and semipolar-plane) ofGaNnanowireexhibitdissimilarstructuralproperties.The structural characteristicsofInGaN/GaNcore–shell arraysareinspectedbycross-sectionalhigh- resolution transmissionelectronmicroscopy(HR-TEM).Wealsoinvestigatetheopticalproper- ties ofMQWcore–shell structurenanoarrays.TheluminescentcharacteristicsofInGaN/GaN core–shell structurearraysaredeterminedbyphotoluminescence(PL)andcathodolumines- cence (CL)measurements.ThemonochromaticCLimagesclearlyshowthelightemission behavior ofInGaN/GaNMQWcoaxialstructure.Twodistinguishablelightemissionpeakswere observed intheGaNnanowirebasedcore–shell structure.Thecharacteristicoflightemission mainly dependsonthepropertiesofMQWs,whicharegeneratedfromdifferentcrystalfacetsof GaN. Inaddition,thelightemissionintensityshowsdifferentbehaviorsdependingonthearea of theGaNnanowire m-plane. TheresultsofthisstudysuggestthatGaNnanowirearrayscanbe used asagoodalternativebasaltemplatefornext-generationlight-emittingdiodes(LEDs).
URI
https://pr.ibs.re.kr/handle/8788114/823
ISSN
2211-2855
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Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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