IBS Publications Repository: Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region

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IBS Publications RepositoryCenter for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단)1. Journal Papers (저널논문)

Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region

DC Field	Value	Language
dc.contributor.author	Jung B.O.	-
dc.contributor.author	Bae S.-Y.	-
dc.contributor.author	Sang Yun Kim	-
dc.contributor.author	Lee S.	-
dc.contributor.author	Jeong Yong Lee	-
dc.contributor.author	Lee D.-S.	-
dc.contributor.author	Kato Y.	-
dc.contributor.author	Honda Y.	-
dc.contributor.author	Amano H.	-
dc.date.available	2015-04-20T05:10:55Z	-
dc.date.created	2015-01-21	-
dc.date.issued	2015-01	-
dc.identifier.issn	2211-2855	-
dc.identifier.uri	https://pr.ibs.re.kr/handle/8788114/823	-
dc.description.abstract	Highly ordered,position-controlledgalliumnitride(GaN)nanowirebasedmultiple-quantum- wells (MQWs)core–shell architecturearraysaresynthesizedbymetalorganicchemicalvapor deposition (MOCVD).WeinvestigatethepossibilityofusingGaNnanowirearraysasabasal template forthegrowthofInxGa1xN/GaN MQWs.TheMQWsonthreedifferentcrystalfacets (c-, m-, and semipolar-plane) ofGaNnanowireexhibitdissimilarstructuralproperties.The structural characteristicsofInGaN/GaNcore–shell arraysareinspectedbycross-sectionalhigh- resolution transmissionelectronmicroscopy(HR-TEM).Wealsoinvestigatetheopticalproper- ties ofMQWcore–shell structurenanoarrays.TheluminescentcharacteristicsofInGaN/GaN core–shell structurearraysaredeterminedbyphotoluminescence(PL)andcathodolumines- cence (CL)measurements.ThemonochromaticCLimagesclearlyshowthelightemission behavior ofInGaN/GaNMQWcoaxialstructure.Twodistinguishablelightemissionpeakswere observed intheGaNnanowirebasedcore–shell structure.Thecharacteristicoflightemission mainly dependsonthepropertiesofMQWs,whicharegeneratedfromdifferentcrystalfacetsof GaN. Inaddition,thelightemissionintensityshowsdifferentbehaviorsdependingonthearea of theGaNnanowire m-plane. TheresultsofthisstudysuggestthatGaNnanowirearrayscanbe used asagoodalternativebasaltemplatefornext-generationlight-emittingdiodes(LEDs).	-
dc.description.uri	1	-
dc.language	영어	-
dc.publisher	Elsevier BV	-
dc.subject	GaN	-
dc.subject	InGaN	-
dc.subject	MQW	-
dc.subject	Nanowire	-
dc.subject	Core–shell	-
dc.subject	MOCVD	-
dc.title	Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region	-
dc.type	Article	-
dc.type.rims	ART	-
dc.identifier.wosid	000351194300033	-
dc.identifier.scopusid	2-s2.0-84911946739	-
dc.identifier.rimsid	16884	ko
dc.date.tcdate	2018-10-01	-
dc.contributor.affiliatedAuthor	Sang Yun Kim	-
dc.contributor.affiliatedAuthor	Jeong Yong Lee	-
dc.identifier.doi	10.1016/j.nanoen.2014.11.003	-
dc.identifier.bibliographicCitation	NANO ENERGY, v.11, pp.294 - 303	-
dc.citation.title	NANO ENERGY	-
dc.citation.volume	11	-
dc.citation.startPage	294	-
dc.citation.endPage	303	-
dc.date.scptcdate	2018-10-01	-
dc.description.wostc	23	-
dc.description.scptc	25	-
dc.description.journalClass	1	-
dc.description.journalRegisteredClass	scie	-
dc.description.journalRegisteredClass	scopus	-
dc.subject.keywordAuthor	Core-shell	-
dc.subject.keywordAuthor	GaN	-
dc.subject.keywordAuthor	InGaN	-
dc.subject.keywordAuthor	MOCVD	-
dc.subject.keywordAuthor	MQW	-
dc.subject.keywordAuthor	Nanowire	-