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원자제어 저차원 전자계 연구단
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Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy

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Title
Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy
Author(s)
Chang-Soo Lee; Gangtae Jin; Seung-Young Seo; Juho Kim,; Cheolhee Han; Min Yeong Park; Heonsu Ahn; Suk-Ho Lee; Soonyoung Cha; Moon-Ho Jo
Subject
EDGE-CONTROLLED GROWTH, ; HETEROSTRUCTURES, ; STACKING, ; KINETICS
Publication Date
2020-06
Journal
CHEMISTRY OF MATERIALS, v.32, no.12, pp.5084 - 5090
Publisher
AMER CHEMICAL SOC
Abstract
© 2020 American Chemical Society. Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2xSe2(1-x) ML growth, where the alloying degree, x, is either continuously or discretely directed on the MLs in the entire range of 0 ≤ x ≤ 1. With this, on-ML band gap modulation is accomplished in the forms of either graded or discrete intra-ML junctions, leading to atomically thin multispectral photodetectors by a spatially resolved manner at the nanoscales
URI
https://pr.ibs.re.kr/handle/8788114/7818
DOI
10.1021/acs.chemmater.0c00949
ISSN
0897-4756
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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