Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy
DC Field | Value | Language |
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dc.contributor.author | Chang-Soo Lee | - |
dc.contributor.author | Gangtae Jin | - |
dc.contributor.author | Seung-Young Seo | - |
dc.contributor.author | Juho Kim, | - |
dc.contributor.author | Cheolhee Han | - |
dc.contributor.author | Min Yeong Park | - |
dc.contributor.author | Heonsu Ahn | - |
dc.contributor.author | Suk-Ho Lee | - |
dc.contributor.author | Soonyoung Cha | - |
dc.contributor.author | Moon-Ho Jo | - |
dc.date.accessioned | 2020-12-22T03:00:24Z | - |
dc.date.accessioned | 2020-12-22T03:00:24Z | - |
dc.date.available | 2020-12-22T03:00:24Z | - |
dc.date.available | 2020-12-22T03:00:24Z | - |
dc.date.created | 2020-07-22 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/7818 | - |
dc.description.abstract | © 2020 American Chemical Society. Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2xSe2(1-x) ML growth, where the alloying degree, x, is either continuously or discretely directed on the MLs in the entire range of 0 ≤ x ≤ 1. With this, on-ML band gap modulation is accomplished in the forms of either graded or discrete intra-ML junctions, leading to atomically thin multispectral photodetectors by a spatially resolved manner at the nanoscales | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | EDGE-CONTROLLED GROWTH | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | STACKING | - |
dc.subject | KINETICS | - |
dc.title | Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000543738500020 | - |
dc.identifier.scopusid | 2-s2.0-85087413817 | - |
dc.identifier.rimsid | 72663 | - |
dc.contributor.affiliatedAuthor | Chang-Soo Lee | - |
dc.contributor.affiliatedAuthor | Gangtae Jin | - |
dc.contributor.affiliatedAuthor | Seung-Young Seo | - |
dc.contributor.affiliatedAuthor | Juho Kim, | - |
dc.contributor.affiliatedAuthor | Cheolhee Han | - |
dc.contributor.affiliatedAuthor | Min Yeong Park | - |
dc.contributor.affiliatedAuthor | Heonsu Ahn | - |
dc.contributor.affiliatedAuthor | Suk-Ho Lee | - |
dc.contributor.affiliatedAuthor | Soonyoung Cha | - |
dc.contributor.affiliatedAuthor | Moon-Ho Jo | - |
dc.identifier.doi | 10.1021/acs.chemmater.0c00949 | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.32, no.12, pp.5084 - 5090 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 5084 | - |
dc.citation.endPage | 5090 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |