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원자제어 저차원 전자계 연구단
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Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy

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dc.contributor.authorChang-Soo Lee-
dc.contributor.authorGangtae Jin-
dc.contributor.authorSeung-Young Seo-
dc.contributor.authorJuho Kim,-
dc.contributor.authorCheolhee Han-
dc.contributor.authorMin Yeong Park-
dc.contributor.authorHeonsu Ahn-
dc.contributor.authorSuk-Ho Lee-
dc.contributor.authorSoonyoung Cha-
dc.contributor.authorMoon-Ho Jo-
dc.date.accessioned2020-12-22T03:00:24Z-
dc.date.accessioned2020-12-22T03:00:24Z-
dc.date.available2020-12-22T03:00:24Z-
dc.date.available2020-12-22T03:00:24Z-
dc.date.created2020-07-22-
dc.date.issued2020-06-
dc.identifier.issn0897-4756-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7818-
dc.description.abstract© 2020 American Chemical Society. Programmed alloying within a van der Waals (vdW) semiconductor monolayer (ML) is achieved by metalorganic vapor-phase epitaxy. Specifically, two versions of on-ML alloying are demonstrated by precise controls of time-lapse vapor pressures during the single-crystalline WS2xSe2(1-x) ML growth, where the alloying degree, x, is either continuously or discretely directed on the MLs in the entire range of 0 ≤ x ≤ 1. With this, on-ML band gap modulation is accomplished in the forms of either graded or discrete intra-ML junctions, leading to atomically thin multispectral photodetectors by a spatially resolved manner at the nanoscales-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectEDGE-CONTROLLED GROWTH-
dc.subjectHETEROSTRUCTURES-
dc.subjectSTACKING-
dc.subjectKINETICS-
dc.titleProgrammed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000543738500020-
dc.identifier.scopusid2-s2.0-85087413817-
dc.identifier.rimsid72663-
dc.contributor.affiliatedAuthorChang-Soo Lee-
dc.contributor.affiliatedAuthorGangtae Jin-
dc.contributor.affiliatedAuthorSeung-Young Seo-
dc.contributor.affiliatedAuthorJuho Kim,-
dc.contributor.affiliatedAuthorCheolhee Han-
dc.contributor.affiliatedAuthorMin Yeong Park-
dc.contributor.affiliatedAuthorHeonsu Ahn-
dc.contributor.affiliatedAuthorSuk-Ho Lee-
dc.contributor.affiliatedAuthorSoonyoung Cha-
dc.contributor.affiliatedAuthorMoon-Ho Jo-
dc.identifier.doi10.1021/acs.chemmater.0c00949-
dc.identifier.bibliographicCitationCHEMISTRY OF MATERIALS, v.32, no.12, pp.5084 - 5090-
dc.citation.titleCHEMISTRY OF MATERIALS-
dc.citation.volume32-
dc.citation.number12-
dc.citation.startPage5084-
dc.citation.endPage5090-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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