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나노 구조 물리 연구단
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CO2 Enhanced Chemical Vapor Deposition Growth of Few-Layer Graphene over NiOx

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Title
CO2 Enhanced Chemical Vapor Deposition Growth of Few-Layer Graphene over NiOx
Author(s)
Son, IH; Song, HJ; Kwon, S; Alicja Bachmatiuk; Lee, SJ; Benayad, A; Park, JH; Choi, JY; Chang, H; Mark Hermann Rummeli
Publication Date
2014-09
Journal
ACS NANO, v.8, no.9, pp.9224 - 9232
Publisher
AMER CHEMICAL SOC
Abstract
The use of mild oxidants in chemical vapor deposition (CVD) reactions has proven enormously useful. This was also true for the CVD growth of carbon nanotubes. As yet though, the use of mild oxidants in the CVD of graphene has remained unexplored. Here we explore the use of CO2 as a mild oxidant during the growth of graphene over Ni with CH4 as the feedstock. Both our experimental and theoretical findings provide in-depth insight into the growth mechanisms and point to the mild oxidants playing multiple roles. Mild oxidants lead to the formation of a suboxide in the Ni, which suppresses the bulk diffusion of C species suggesting a surface growth mechanism. Moreover, the formation of a suboxide leads to enhanced catalytic activity at the substrate surface, which allows reduced synthesis temperatures, even as low as 700 C. Even at these low temperatures, the quality of the graphene is exceedingly high as indicated by a negligible Dmode in the Raman spectra. These findings suggest the use ofmild oxidants in the CVD fabrication as awhole could have a positive impact.
URI
https://pr.ibs.re.kr/handle/8788114/775
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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