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Inverse Stranski-Krastanov Growth in Single-Crystalline Sputtered Cu Thin Films for Wafer-Scale Device Applications

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Title
Inverse Stranski-Krastanov Growth in Single-Crystalline Sputtered Cu Thin Films for Wafer-Scale Device Applications
Author(s)
Seunghun Lee; Ho-Yeol Park; Su Jae Kim; Hyangsook Lee; Ik-Jae Lee; Chae Ryong Cho; Eunha Lee; Se-Young Jeong; Young Hee Lee
Publication Date
2019-05
Journal
ACS Applied Nano Materials, v.2, no.5, pp.3300 - 3306
Publisher
AMER CHEMICAL SOC
Abstract
© 2019 American Chemical Society.The single-crystalline copper (Cu) thin film is a platform substrate for the growth of numerous materials and has been a significant issue for the scientific community. The primary concern is the inevitable presence of stacking faults and twin boundary formation in inherent face-centered-cubic (FCC) structures. Here, we report a method for growing single-crystalline Cu(111) thin films on an Al2O3 substrate using conventional sputtering deposition. The desired growth configuration is induced by hidden incoherent twin boundaries (HITBs) embedded during the early growth stages. Two possible FCC stacking orders of Cu atoms, A-B-C-A and A-C-B-A rotated by 60°, give rise to HITBs between islands, as confirmed by X-ray diffraction phi-scan mapping. Such islands merge every three layers, triggering layer-by-layer growth that subsequently leads to an inverse Stranski-Krastanov growth mode. Single-crystalline Cu(111) thin film growth is confirmed by high-resolution transmission electron microscopy and electron backscatter diffraction mapping. Our approach paves the way for mass production of single-crystalline metal thin film and thus leads to substantial advanced research and electronic device application
URI
https://pr.ibs.re.kr/handle/8788114/7272
ISSN
2574-0970
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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