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나노 구조 물리 연구단
나노구조물리 연구단
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Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

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Title
Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications
Author(s)
Linfeng Sun; Genuwoo Hwang; Wooseon Choi; Gyeongtak Han; Yishu Zhang; Jinbao Jiang; Shoujun Zheng; Kenji Watanabe; Takashi Taniguchi; Mali Zhao; Rong Zhao; Young-Min Kim; Heejun Yang
Publication Date
2020-03
Journal
NANO ENERGY, v.69, no., pp.104472 -
Publisher
ELSEVIER SCIENCE BV
Abstract
© 2020 Elsevier LtdTo realize ultrafast and energy-efficient electronic devices, reducing the switching voltage slope for ON and OFF states that scales the supply voltage and device dimensions is critical. Novel device architectures based on two-dimensional (2D) materials have overcome the fundamental thermionic limit of the switching slope (60 mV/dec); however, a versatile switching device required for highly integrated memory and neuromorphic applications has not been achieved with such exceptional switching slope characteristics. Here, we demonstrate a switching voltage slope down to 0.62 mV/dec in a threshold switching device based on a vertical heterojunction of silver/hexagonal boron nitride (h-BN)/graphene. The sub-1 mV/dec switching slope for the first time, maintaining a high ON/OFF ratio (up to 1010), originates from the unique coupling between the migrated silver atoms and the chemically-inert graphene electrode through the 2D insulating h-BN. Moreover, our original switching device enables the evolution from a conventional volatile (threshold switching) to non-volatile memristive state by adequate voltage spikes, which is ideal for selector applications in highly integrated crossbar array architecture and in a novel synaptic device for neuromorphic computing
URI
https://pr.ibs.re.kr/handle/8788114/7224
ISSN
2211-2855
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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