BROWSE

Related Scientist

Researcher

나노 구조 물리 연구단
나노구조물리 연구단
more info

NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: Study of UV light illuminations and humidity

Cited 0 time in webofscience Cited 0 time in scopus
79 Viewed 14 Downloaded
Title
NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: Study of UV light illuminations and humidity
Author(s)
Maddaka Reddeppa; Byung-Guon Park; G. Murali; Soo Ho Choi; Nguyen Duc Chinh; Dojin Kim; Woochul Yang; Moon-Deock Kim
Publication Date
2020-04
Journal
SENSORS AND ACTUATORS B-CHEMICAL, v.308, no., pp.127700 -
Publisher
ELSEVIER SCIENCE SA
Abstract
© 2020 Elsevier B.V.Transition metal dichalcogenides (TMDs) have gained extensive interest due to their phenomenal optoelectrical and electrochemical properties. Recently, TMDs are used as one of the auspicious materials for the chemical gas sensor application owing to their low operating temperatures. In this study, we developed room-temperature nitrogen oxide (NOx) gas sensors using n-MoS2/p-GaN hybrid-structure made by layer-transfer technique. The device response to NO2, NO, NH3, H2, H2S, and CO target gases under UV illumination at 27 °C has been evaluated. The n-MoS2/p-GaN heterostructure was noticed to have significant selectivity to NO2 gas compared to pristine p-GaN film with particularly high response of 98.42 % to 50 ppm of NO2 under UV illumination. Under UV light, MoS2/p-GaN heterostructure works effectively at a lower temperature than in dark. Further, by using photonic energy we also boosted NO2 response and made recovery signal of device faster. Our results divulged that temperature significantly influenced the response of the heterostructure and it escalated from 47.48 % to 148.81 % to 50 ppm of NO2 in the temperature range of 27–150 °C. The heterostructure sensor showed slight degradation (less than 15 %) to NO2 at 60 % of relative humidity. The proposed device seems to be a good candidate for room temperature gas sensing applications
URI
https://pr.ibs.re.kr/handle/8788114/7100
ISSN
0925-4005
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
NOx gas sensors_Sensors and Actuators B Chemical_Soo Ho Choi.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse