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강상관계 물질 연구단
강상관계 물질 연구단
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Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films

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Title
Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films
Author(s)
Lingfei Wang; Qiyuan Feng; Han Gyeol Lee; Eun Kyo Ko; Qingyou Lu; Tae Won Noh
Publication Date
2020-04
Journal
NANO LETTERS, v.20, no.4, pp.2468 - 2477
Publisher
AMER CHEMICAL SOC
Abstract
In quantum matters hosting electron−electron correlation and spin−orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for understanding exotic topological properties. A prominent example is Hall anomalies observed in SrRuO 3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the evolution of AHE with controllable inhomogeneities in SrRuO 3 film thickness (t SRO ). By exploiting the step-flow growth of SrRuO 3 films, we induced a microscopically ordered stripe pattern with one-unit-cell differences in t SRO . The associated spatial distribution of momentum-space Berry curvatures enables a two-channel AHE with hump-like Hall anomalies, which can be continuously engineered according to non-integer t SRO . We further microscopically characterized the stripe-like ferromagnetic domains and two-step magnetic switching behavior in the inhomogeneous SrRuO 3 film. These unique features can be utilized to identify the two-channel AHE model and understand its microscopic origin. © 2020 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/7095
ISSN
1530-6984
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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