Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lingfei Wang | - |
dc.contributor.author | Qiyuan Feng | - |
dc.contributor.author | Han Gyeol Lee | - |
dc.contributor.author | Eun Kyo Ko | - |
dc.contributor.author | Qingyou Lu | - |
dc.contributor.author | Tae Won Noh | - |
dc.date.available | 2020-04-09T05:39:29Z | - |
dc.date.created | 2020-04-01 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/7095 | - |
dc.description.abstract | In quantum matters hosting electron−electron correlation and spin−orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for understanding exotic topological properties. A prominent example is Hall anomalies observed in SrRuO 3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the evolution of AHE with controllable inhomogeneities in SrRuO 3 film thickness (t SRO ). By exploiting the step-flow growth of SrRuO 3 films, we induced a microscopically ordered stripe pattern with one-unit-cell differences in t SRO . The associated spatial distribution of momentum-space Berry curvatures enables a two-channel AHE with hump-like Hall anomalies, which can be continuously engineered according to non-integer t SRO . We further microscopically characterized the stripe-like ferromagnetic domains and two-step magnetic switching behavior in the inhomogeneous SrRuO 3 film. These unique features can be utilized to identify the two-channel AHE model and understand its microscopic origin. © 2020 American Chemical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO3 Ultrathin Films | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000526413400031 | - |
dc.identifier.scopusid | 2-s2.0-85083003256 | - |
dc.identifier.rimsid | 71724 | - |
dc.contributor.affiliatedAuthor | Lingfei Wang | - |
dc.contributor.affiliatedAuthor | Han Gyeol Lee | - |
dc.contributor.affiliatedAuthor | Tae Won Noh | - |
dc.identifier.doi | 10.1021/acs.nanolett.9b05206 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.20, no.4, pp.2468 - 2477 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2468 | - |
dc.citation.endPage | 2477 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |