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나노 구조 물리 연구단
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Ultrashort Vertical-Channel van der Waals Semiconductor Transistors

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Title
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors
Author(s)
Jinbao Jiang; Manh‐Ha Doan; Linfeng Sun; Hyun Kim; Hua Yu; Min‐Kyu Joo; Sang Hyun Park; Heejun Yang; Dinh Loc Duong; Young Hee Lee
Publication Date
2020-02
Journal
ADVANCED SCIENCE, v.7, no.4, pp.1902964 -
Publisher
WILEY
Abstract
© 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimAtomically thin 2D van der Waals semiconductors are promising candidates for next-generation nanoscale field-effect transistors (FETs). Although large-area 2D van der Waals materials have been successfully synthesized, such nanometer-length-scale devices have not been well demonstrated in 2D van der Waals semiconductors. Here, controllable nanometer-scale transistors with a channel length of ≈10 nm are fabricated via vertical channels by squeezing an ultrathin insulating spacer between the out-of-plane source and drain electrodes, and the feasibility of high-density and large-scale fabrication is demonstrated. A large on-current density of ≈70 µA µm−1 nm−1 at a source–drain voltage of 0.5 V and a high on/off ratio of ≈107–109 are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition. The work provides a promising route toward the complementary metal–oxide–semiconductor-compatible fabrication of wafer-scale 2D van der Waals transistors with high-density integration
URI
https://pr.ibs.re.kr/handle/8788114/6996
ISSN
2198-3844
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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