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Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface

Cited 12 time in webofscience Cited 13 time in scopus
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Title
Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface
Author(s)
Sidi Fan; Quoc An Vu; Sanghyub Lee; Thanh Luan Phan; Gyeongtak Han; Young-Min Kim; Woo Jong Yu; Young Hee Lee
Subject
2D tunneling heterojunction, ; Esaki diode, ; negative differential resistance, ; tin diselenide, ; tungsten diselenide
Publication Date
2019-07
Journal
ACS NANO, v.13, no.7, pp.8193 - 8201
Publisher
AMER CHEMICAL SOC
Abstract
© 2019 American Chemical Society.Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain homogeneity and band steepness at interfaces, exhibit promising performance for band-to-band tunneling (BTBT) devices. Esaki tunnel diodes based on vdW heterostructures, however, yield poor current density and peak-to-valley ratio, inferior to those of three-dimensional materials. Here, we report the negative differential resistance (NDR) behavior in a WSe2/SnSe2 heterostructure system at room temperature and demonstrate that heterointerface control is one of the keys to achieving high device performance by constructing WSe2/SnSe2 heterostructures in inert gas environments. While devices fabricated in ambient conditions show poor device performance due to the observed oxidation layer at the interface, devices fabricated in inert gas exhibit extremely high peak current density up to 1460 mA/mm2, 3-4 orders of magnitude higher than reported vdW heterostructure-based tunnel diodes, with a peak-to-valley ratio of more than 4 at room temperature. Besides, Pd/WSe2 contact in our device possesses a much higher Schottky barrier than previously reported Cr/WSe2 contact in the WSe2/SnSe2 device, which suppresses the thermionic emission current to less than the BTBT current level, enabling the observation of NDR at room temperature. Diode behavior can be further modulated by controlling the electrostatic doping and the tunneling barrier as well
URI
https://pr.ibs.re.kr/handle/8788114/6617
DOI
10.1021/acsnano.9b03342
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Tunable Negative_ACS Nano_Young Hee Lee.pdfDownload

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