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나노 구조 물리 연구단
나노구조물리 연구단
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Efficient Gate Modulation in a Screening-Engineered MoS2/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor

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Title
Efficient Gate Modulation in a Screening-Engineered MoS2/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor
Author(s)
Thanh Luan Phan; Quoc An Vu; Young Rae Kim; Yong Seon Shin; Il Min Lee; Woo Jong Yu; Jinbao Jiang; Dinh Hoa Luong; Lei Liao; Young Hee Lee; Minh Dao Tran
Publication Date
2019-07
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.28, pp.25516 - 25523
Publisher
AMER CHEMICAL SOC
Abstract
© 2019 American Chemical Society.In this report, a screening-engineered carbon nanotube (CNT) network/MoS2/metal heterojunction vertical field effect transistor (CNT-VFET) is fabricated for an efficient gate modulation independent of the drain voltage. The gate field in the CNT-VFET transports through the empty space of the CNT network without any screening layer and directly modulates the MoS2 semiconductor energy band, while the gate field from the Si back gate is mostly screened by the graphene layer. Consequently, the on/off ratio of CNT-VFET maintained 103 in overall drain voltages, which is 10 times and 1000 times higher than that of the graphene (Gr) VFET at Vsd = 0.1 (ratio = 81.9) and 1 V (ratio = 3), respectively. An energy band diagram simulation shows that the Schottky barrier modulation of CNT/MoS2 contact along the sweeping gate bias is independent of the drain voltage. On the other hand, the gate modulation of Gr/MoS2 is considerably reduced with increased drain voltage because more electrons are drawn into the graphene electrode and screens the gate field by applying a higher drain voltage to the graphene/MoS2/metal capacitor
URI
https://pr.ibs.re.kr/handle/8788114/6616
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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