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나노 구조 물리 연구단
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Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI)(y)(Bi2Te3)(0.95-x)(Bi2Se3)(x)(Bi2S3)(0.05) quaternary system

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Title
Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI)(y)(Bi2Te3)(0.95-x)(Bi2Se3)(x)(Bi2S3)(0.05) quaternary system
Author(s)
Hyunyong Cho; Song Yi Back; Jin Hee Kim; Omkaram Inturu; Ho Seong Lee; Jong-Soo Rhyee
Publication Date
2019-01
Journal
RSC ADVANCES, v.9, no.8, pp.4190 - 4197
Publisher
ROYAL SOC CHEMISTRY
Abstract
Bi2Te3-based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi2Te3-Bi2Se3-Bi2S3 composites can be used for mid-temperature power generation under 500 degrees C. Herein, we investigated the thermoelectric properties of (CuI)(y)(Bi2Te3)(0.95-x)(Bi2Se3)(x)(Bi2S3)(0.05) (x = 0.05, 0.2; y = 0.0, 0.003) compounds. Through X-ray diffraction and transmission electron microscopy, we confirmed that the lattice disorder in (Bi2Te3)(0.95-x)(Bi2Se3)(x)(Bi2S3)(0.05) (x = 0.2) was due to multiple element substitutions. Disorder carrier scattering induced the localized nature of electrical resistivity, as confirmed by variable range hopping at low temperature. The temperature-dependent Seebeck coefficient of (Bi2Te3)(0.95-x)(Bi2Se3)(x)(Bi2S3)(0.05) showed a carrier-type change from p- to n-type behaviour in the intermediate temperature range (525 K for x = 0.05 and 360 K for x = 0.2). Even though strong carrier localization increased electrical resistivity, resulting in degradation of the power factor and thermoelectric performance, when the chemical potential was increased to the conduction band minimum through CuI co-doping into the (CuI)(0.003)(Bi2Te3)(0.95-x)(Bi2Se3)(x)(Bi2S3)(0.05) (x = 0.05, 0.2) compounds, the carriers were delocalized and showed n-type behaviour in the Seebeck coefficient. The temperature-dependent thermal conductivity shows the suppression of bipolar conduction behaviour. The simultaneous effect on carrier optimization through chemical potential tuning and lattice disorder caused a high ZT value of 0.85 at 523 K for CuI-doped (Bi2Te3)(0.75)(Bi2Se3)(0.2)(Bi2S3)(0.05), which was comparatively high for n-type thermoelectric materials in the mid-temperature range. © The Royal Society of Chemistry 2019
URI
https://pr.ibs.re.kr/handle/8788114/6610
ISSN
2046-2069
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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