BROWSE

Related Scientist

Researcher

나노입자 연구단
나노입자 연구단
more info

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

Cited 0 time in webofscience Cited 0 time in scopus
11 Viewed 1 Downloaded
Title
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
Author(s)
Lee T.Y.; Lee K.; Lim H.H.; Song M.S.; Yang S.M.; Yoo H.K.; Suh D.I.; Zhu Z.; Yoon A.; Macdonald M.R.; Lei X.; Jeong H.Y.; Donghoon Lee; Kunwoo Park; Jungwon Park; Chae S.C.
Publication Date
2019-01
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.3, pp.3142 - 3149
Publisher
AMER CHEMICAL SOC
Abstract
The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the wake-up effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder. © 2018 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/6487
ISSN
1944-8244
Appears in Collections:
Center for Nanoparticle Research(나노입자 연구단) > Journal Papers (저널논문)
Files in This Item:
ACS Appl. Mater. Interfaces_2019, 11, 3142-3149.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse