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나노 구조 물리 연구단
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Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

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Title
Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure
Author(s)
Jinsu Pak; Jinsu Pak; Kyungjune Cho; Jae-Keun Kim; Hyunhak Jeong; Wang-Taek Hwang; Geun Ho Ahn; Keehoon Kang; Woo Jong Yu; Ali Javey; Seungjun Chung; Takhee Lee
Publication Date
2019-08
Journal
ACS NANO, v.13, no.8, pp.9638 - 9646
Publisher
AMER CHEMICAL SOC
Abstract
© 2019 American Chemical Society.In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electron-hole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors
URI
https://pr.ibs.re.kr/handle/8788114/6446
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Intrinsic Optoelectronic_ACS Nano_Woo jong Yu.pdfDownload

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