BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Critical role of atomic-scale defect disorders for high-performance nanostructured half-Heusler thermoelectric alloys and their thermal stability

Cited 0 time in webofscience Cited 2 time in scopus
618 Viewed 290 Downloaded
Title
Critical role of atomic-scale defect disorders for high-performance nanostructured half-Heusler thermoelectric alloys and their thermal stability
Author(s)
Ho Jae Lee; Kyu Hyoung Lee; Liangwei Fu; Gyeong Tak Han; Hyun-Sik Kim; Sang-Il Kim; Young-Min Kim; Sung Wng Kim
Subject
Antisite defect, ; Atomic-scale defect disorder, ; Half-heusler, ; Interstitial defect, ; Thermoelectrics
Publication Date
2019-11
Journal
ACTA MATERIALIA, v.180, pp.97 - 104
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
© 2019Atomic-scale defects are essential for improving thermoelectric (TE) performance of most state-of-the-art materials by simultaneously tuning the electronic and thermal properties. However, because the plural atomic-scale defects are generally inherent and disordered in nanostructured TE materials, their complexity and ambiguity on determining TE performance remain a challenge to be solved. Furthermore, the thermal stability of atomic-scale defects in nanostructured TE materials has not been studied much so far. Herein, we report that the atomic-scale defect disorders are indispensable for high TE performance of nanostructured Ti1–xHfxNiSn1–ySby half-Heusler alloys, but gradually degraded at over 773 K, deteriorating the TE performance. It is found from the thermal annealing of nanostructured Ti0.5Hf0.5NiSn0.98Sb0.02 alloys that the annihilation of Ti,Hf/Sn antisite defects primarily reduces atomic-scale defect disorders and largely contributes to the increase of lattice thermal conductivity. Moreover, it is verified that the Ni interstitial defects mainly dominate the electronic transport properties, leading to the enhancement of power factor. Direct atomic structure observations clearly demonstrate the inherent Ni interstitial defects and the thermal vulnerability of Ti,Hf/Sn antisite defects. These results provide an important guide for the application of half-Heusler alloys with highly disordered atomic-scale defects
URI
https://pr.ibs.re.kr/handle/8788114/6407
DOI
10.1016/j.actamat.2019.09.004
ISSN
1359-6454
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Critical role of atomic_Acta Materialia_Sung Wng Kim.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse