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나노 구조 물리 연구단
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Single-Crystalline Monolayer Graphene Wafer on Dielectric Substrate of SiON without Metal Catalysts

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Title
Single-Crystalline Monolayer Graphene Wafer on Dielectric Substrate of SiON without Metal Catalysts
Author(s)
Bong Gyu Shin; Dae Hwan Boo; Bumsub Song; Sunam Jeon; Minwoo Kim; Sangwoo Park; Eun Soo An; Jun Sung Kim; Young Jae Song; Young Hee Lee
Publication Date
2019-06
Journal
ACS NANO, v.13, no.6, pp.6662 - 6669
Publisher
AMER CHEMICAL SOC
Abstract
Many scientific and engineering efforts have been made to realize graphene electronics by fully utilizing intrinsic properties of ideal graphene for last decades. The most technical huddles come from the absence of wafer-scale graphene with a single-crystallinity on dielectric substrates. Here, we report an epitaxial growth of single-crystalline monolayer graphene directly on a single-crystalline dielectric SiON-SiC (0001) with a full coverage via epitaxial chemical vapor deposition (CVD) without metal catalyst. Si The dielectric surface of SiON provides atomically flat and chemically inert interface by passivation of dangling bonds, which keeps intrinsic properties of graphene. Atomic structures with a clean interface, full coverage of single-crystalline monolayer, and the epitaxy of graphene on SiON were confirmed macroscopically by mapping low energy electron diffraction (LEED) and Raman spectroscopy, and atomically by scanning tunneling microscopy (STM). Both of measured and calculated local density of states (LDOS) exhibit a symmetric and sharp Dirac cone with a Dirac point located at a Fermi level. Our method provides a route to utilize a single-crystalline dielectric substrate for ideal graphene growth for future applications. © 2019 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/6168
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Single-crysalline_ACS Nano_Young Jae Song.pdfDownload

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