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나노 구조 물리 연구단
나노구조물리 연구단
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Possible Rashba band splitting and thermoelectric properties in CuI-doped Bi2Te2.7Se0.3 bulk crystals

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Title
Possible Rashba band splitting and thermoelectric properties in CuI-doped Bi2Te2.7Se0.3 bulk crystals
Author(s)
Jin Hee Kim; Hyunyong Cho; Jae Hyun Yun; Song Yi Back; Chang-Hoon Lee; Jihoon Shim; Jong-Soo Rhyee
Publication Date
2019-10
Journal
JOURNAL OF ALLOYS AND COMPOUNDS, v.806, no., pp.636 - 642
Publisher
ELSEVIER SCIENCE SA
Abstract
© 2019 Elsevier B.V.We investigated thermoelectric properties of the CuI-doped (CuI)xBi2Te2.7Se0.3 bulk crystals grown by the Bridgman method. From the formation energy calculation and lattice parameter expansion along the c-axis, we confirm that the Cu-atom intercalates at the van der Waals layer while iodine substitutes at the Te(2) site which donates two electrons per CuI doping. The band structure calculation in iodine doped bismuth telluride monolayer shows band splitting along the momentum direction implying the Rashba type band splitting near the Fermi level. The Seebeck coefficient as a function of Hall carrier concentration on the compounds does not follow the Pisarenko's relation, whereas it follows the Rashba type Seebeck coefficient. The theoretical fitting with the Rashba type Seebeck coefficient indicates that the Rashba energy is increased with increasing CuI doping concentration. Owing to the enhancement of power factor near room temperature and reduction of lattice thermal conductivity by atomic scattering of phonon, the CuI doped compound (CuI)xBi2Te2.7Se0.3 (x= 0.3 mol.%) exhibited high ZT value over a wide temperature range
URI
https://pr.ibs.re.kr/handle/8788114/6118
ISSN
0925-8388
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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