Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

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Title
Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires
Author(s)
Jae-Eun Kim; Jung Yeol Shin; Hyun-Seok Jang; Jun Woo Jeon; Won G. Hong; Hae Jin Kim; Junhee Choi; Gyu-Tae Kim; Byung Hoon Kim; Jonghyurk Park; Young Jin Choi; Jeong Young Park
Publication Date
2019-03
Journal
NANOSCALE, v.11, no.10, pp.4219 - 4225
Publisher
ROYAL SOC CHEMISTRY
Abstract
We report improved conductance by reducing the work function via incorporation of hydrogen into VO2 nanowires. The VO2 nanowires were prepared using the chemical vapor deposition method with V2O5 powder on silicon substrates at 850 degrees C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H-2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.
URI
https://pr.ibs.re.kr/handle/8788114/6021
ISSN
2040-3364
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
Files in This Item:
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