Defect-Affected Photocurrent in MoTe 2 FETs

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Title
Defect-Affected Photocurrent in MoTe 2 FETs
Author(s)
Mohan Kumar Ghimire; Hyunjin Ji; Hamza Zad Gul; Hojoon Yi; Jinbao Jiang; Seong Chu Lim
Publication Date
2019-03
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.10, pp.10068 - 10073
Publisher
AMER CHEMICAL SOC
Abstract
Imperfections in the crystal lattice, such as defects, grain boundaries, or dislocations, can significantly affect the optical and electrical transport properties of materials. In this study, we report the effect of mid gap trap states on photocurrent in 10 atomic layered 2H-MoTe 2 . Our study reveals that the photocurrent is very sensitive to the number of active traps, which can be controlled by V gs . By fitting the measured transient drain current, our estimation shows that the trap-state density is approximately 5 × 10 11 cm -2 . By analyzing the photocurrent data as a function of the gate voltage, we realize how the ionized traps affect the photoexcited carriers. The model of hole traps, electron traps, and recombination centers inside the band gap successfully describes our observed results. © Copyright © 2019 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/6005
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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