Modulating the Functions of MoS 2 /MoTe 2 van der Waals Heterostructure via Thickness Variation

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Title
Modulating the Functions of MoS 2 /MoTe 2 van der Waals Heterostructure via Thickness Variation
Author(s)
Ngoc Thanh Duong; Juchan Lee; Seungho Bang; Chulho Park; Seong Chu Lim; Mun Seok Jeong
Publication Date
2019-04
Journal
ACS NANO, v.13, no.4, pp.4478 - 4485
Publisher
AMER CHEMICAL SOC
Abstract
Various functional devices including p-n forward, backward, and Zener diodes are realized with a van der Waals heterostructure that are composed of molybdenum disulfide (MoS2) and molybdenum ditelluride (MoTe2) by changing the thickness of the MoTe2 layer and common gate bias. In addition, the available negative differential transconductance of the heterostructure is utilized to fabricate a many-valued logic device that exhibits three different logic states ( i.e., a ternary inverter). Furthermore, the multivalued logic device can be transformed into a binary inverter using laser irradiation. This work provides a comprehensive understanding of the device fabrication and electronic-device design utilizing thickness control. © 2019 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/5992
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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