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나노 구조 물리 연구단
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Two-Terminal Multibit Optical Memory via van der Waals Heterostructure

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Title
Two-Terminal Multibit Optical Memory via van der Waals Heterostructure
Author(s)
Minh Dao Tran; Hyun Kim; Jun Suk Kim; Manh Ha Doan; Tuan Khanh Chau; Quoc An Vu; Ji‐Hee Kim; Young Hee Lee
Publication Date
2019-02
Journal
ADVANCED MATERIALS, v.31, no.7, pp.1807075 -
Publisher
WILEY-V C H VERLAG GMBH
Abstract
2D van der Waals (vdWs) heterostructures exhibit intriguing optoelectronic properties in photodetectors, solar cells, and light-emitting diodes. In addition, these materials have the potential to be further extended to optical memories with promising broadband applications for image sensing, logic gates, and synaptic devices for neuromorphic computing. In particular, high programming voltage, high off-power consumption, and circuital complexity in integration are primary concerns in the development of three-terminal optical memory devices. This study describes a multilevel nonvolatile optical memory device with a two-terminal floating-gate field-effect transistor with a MoS2/hexagonal boron nitride/graphene heterostructure. The device exhibits an extremely low off-current of approximate to 10(-14) A and high optical switching on/off current ratio of over approximate to 10(6), allowing 18 distinct current levels corresponding to more than four-bit information storage. Furthermore, it demonstrates an extended endurance of over approximate to 10(4) program-erase cycles and a long retention time exceeding 3.6 x 10(4) s with a low programming voltage of -10 V. This device paves the way for miniaturization and high-density integration of future optical memories with vdWs heterostructures. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/5900
ISSN
0935-9648
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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