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Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer

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Title
Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer
Author(s)
Stephen Boandoh; Frederick Agyapong-Fordjour; Soo Ho Choi; Joo Song Lee; Ji-Hoon Park; Hayoung Ko; Gyeongtak Han; Seok Joon Yun; Sehwan Park; Young-Min Kim; Woochul Yang; Young Hee Lee; Soo Min Kim; Ki Kang Kim
Subject
conformal contact, ; glass transition temperature, ; ultraclean interface, ; van der Waals heterostructure, ; viscoelastic polymer support layer
Publication Date
2019-01
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.1, pp.1579 - 1586
Publisher
AMER CHEMICAL SOC
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer-scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature (Tg) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV·dec-1 for the Tafel slope and 0.12 kω of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure. © 2018 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/5729
DOI
10.1021/acsami.8b16261
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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