Restoring the photovoltaic effect in graphene-based van der Waals heterojunctions towards self-powered high-detectivity photodetectors

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Title
Restoring the photovoltaic effect in graphene-based van der Waals heterojunctions towards self-powered high-detectivity photodetectors
Author(s)
Hao Li; Xinming Li; Ji-Hoon Park; Li Tao; Ki Kang Kim; Young Hee Lee; Jian-Bin Xu
Publication Date
2019-03
Journal
NANO ENERGY, v.57, no., pp.214 - 221
Publisher
Elsevier BV
Abstract
Photodiodes composed of graphene and other two-dimensional materials are potential for high-sensitivity self-powered photodetectors, but the photovoltaic effect of graphene-based two-dimensional heterojunctions is often depressed and is, therefore, weaker than what it is expected. In this work, we have revealed that the loss of zero-bias photocurrent in the molybdenum disulfide (MoS2)/graphene photodiode originates from the interlayer coupling of photocarriers at the interface. By introducing atomically thin hexagonal boron nitride (h-BN) film into the MoS2/graphene interface, the interlayer carrier coupling at the MoS2/graphene interface under zero-bias is substantially blocked by the h-BN layer while the transport of photo-generated holes is realized through quantum tunneling. Therefore, the insertion of h-BN could increase the zero-bias photocurrent of the MoS2/graphene heterojunction for over three orders, and a high-sensitivity self-power vertical MoS2/h-BN/graphene van der Waals (vdW) heterostructure tunneling photodetector can be developed, which exhibits a high photo conversion efficiency (external quantum efficiency over 80%), improved photocurrent to dark current ratio (over 1000) and a corresponding high specific detectivity (5.9 × 1014 Jones for white-noise limited detectivity and 6.7 × 1010 Jones for the measured detectivity). This intriguing photovoltaic effect restoring has significant potential in practical applications of high-sensitivity graphene-based self-powered photodetection. © 2018 Published by Elsevier Ltd.
URI
https://pr.ibs.re.kr/handle/8788114/5659
ISSN
2211-2855
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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