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나노 구조 물리 연구단
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Direct growth of doping controlled monolayer WSe2 by selenium-phosphorus substitution

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Title
Direct growth of doping controlled monolayer WSe2 by selenium-phosphorus substitution
Author(s)
Won Tae Kang; Il Min Lee; Seok Joon Yun; Young Il Song; Kunnyun Kim; Do-Hwan Kim; Yong Seon Shin; Kiyoung Lee; Jinseong Heo; Young-Min Kim; Young Hee Lee; Woo Jong Yu
Publication Date
2018-06
Journal
NANOSCALE, v.10, no.24, pp.11397 - 11402
Publisher
ROYAL SOC CHEMISTRY
Abstract
Although many studies have been carried out on the doping of transition metal dichalcogenides (TMDCs), introducing controllable amounts of dopants into a TMD lattice is still insufficient. Here we demonstrate doping controlled TMDC growth by the replacement of selenium with phosphorus during the synthesis of the monolayer WSe2. The phosphorus doping density was precisely controlled by fine adjustment of the amount of P2O5 dopant powder along the pre-annealing time. Raman spectroscopy, photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and high-angle annular bright field scanning tunneling electron microscopy (HAADF STEM) provide evidence that P doping occurs within the WSe2 crystal with P occupying the substitutional Se sites. With regard to its electrical characteristics, the hole majority current of P-doped WSe2 is 100-times higher than that of the intrinsic WSe2. The measured doping concentration ranged from ∼8.16 × 1010 to ∼1.20 × 1012 depending on the amount of P2O5 dopant powder by pre-annealing. © 2018 The Royal Society of Chemistry
URI
https://pr.ibs.re.kr/handle/8788114/5568
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
06 c8nr03427c (Direct growth of doping).pdfDownload

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