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나노 구조 물리 연구단
나노구조물리 연구단
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Ultrafast nonlinear travel of hot carriers driven by high-field terahertz pulse

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Title
Ultrafast nonlinear travel of hot carriers driven by high-field terahertz pulse
Author(s)
Hee Jun Shin; Van Luan Nguyen; Seong Chu Lim; Joo-Hiuk Son
Publication Date
2018-07
Journal
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, v.51, no.14, pp.144003 -
Publisher
IOP PUBLISHING LTD
Abstract
We aim to generate high-intensity terahertz (THz) electric fields and study nonlinear phenomena in GaAs and graphene to investigate their applications. To obtain a high-efficiency intense THz field, we employ the tilted pump-pulse front technique using a LiNbO3 crystal. With this technique, we obtain a THz field strength of over 300 kV cm(-1). We investigate the hot-carrier dynamics in n- and p-type GaAs driven by high-field THz pulses. Although both samples show similar carrier concentrations, the nonlinear THz responses show different trends. Owing to hotcarrier generation, intervalley scattering is dominant in n-type GaAs, and intervalence band scattering is the main cause in p-type GaAs. In addition, we study the hot-carrier dynamics in graphene with the grain-size dependency. Although graphene has the same Fermi level regardless of the grain size, the THz responses are different for large-and small-grained graphene: charged impurity scattering in large-grained graphene and defect scattering in smallgrained graphene. From these results, our study provides insights into high-speed electronics applications © 2018 IOP Publishing Ltd
URI
https://pr.ibs.re.kr/handle/8788114/5538
ISSN
0953-4075
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
04 Shin_2018_J._Phys._B%3A_At._Mol._Opt._Phys._51_144003.pdfDownload

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