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나노 구조 물리 연구단
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Bulk β-Te to few layered β-tellurenes: indirect to direct band-Gap transitions showing semiconducting property

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Title
Bulk β-Te to few layered β-tellurenes: indirect to direct band-Gap transitions showing semiconducting property
Author(s)
Bozhao Wu; Xinghui Liu; Jiuren Yin; Hyoyoung Lee
Publication Date
2017-09
Journal
MATERIALS RESEARCH EXPRESS, v.4, no.9, pp.095902 -
Publisher
IOP PUBLISHING LTD
Abstract
Herein we report a prediction of a highly kinetic stable layered structure of tellurium (namely, bulk beta-Te), which is similar to these layered bulk materials such as graphite, black phosphorus, and gray arsenic. Bulk beta-Te turns out to be a semiconductor that has a band gap of 0.325 eV (HSE06: 0.605 eV), based on first-principles calculations. Moreover, the single-layer form of the bulk beta-Te, called beta-tellurene, is predicted to have a high stability. When the bulk beta-Te is thinned to one atomic layer, an indirect semiconductor of band gap is changed to 1.265 eV (HSE06: 1.932 eV) with a very high kinetic stability. Interestingly, an increase of the number of the beta-tellurene layers from one to three is accompanied by a shift from an indirect to direct band gap. Furthermore, the effective carrier masses, the optical properties and phonon modes of few-layer beta-tellurenes are characterized. Few-layer beta-tellurenes strongly absorb the ultraviolet and blue-violet visible lights. The dramatic changes in the electronic structure and excellent photo absorptivities are expected to pave the way for high speed ultrathin transistors, as well as optoelectronic devices working in the UV or blue-green visible regions. © Copyright 2017 IOP Publishing Terms & conditions Disclaimer
URI
https://pr.ibs.re.kr/handle/8788114/5516
ISSN
2053-1591
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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