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강상관계 물질 연구단
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Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film

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Title
Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film
Author(s)
Soonmin Kang; Yi Tseng; Beom Hyun Kim; Seokhwan Yun; Byungmin Sohn; Bongju Kim; Daniel McNally; Eugenio Paris; Choong H. Kim; Changyoung Kim; Tae Won Noh; Sumio Ishihara; Thorsten Schmitt; Je-Geun Park
Publication Date
2019-01
Journal
PHYSICAL REVIEW B, v.99, no.4, pp.045113 -
Publisher
AMER PHYSICAL SOC
Abstract
The electronic structure of SrRuO3 thin film with a thickness from 1 to 50 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that the orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition occurring in the 4-u.c. sample. From these two clear observations we conclude that the QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters. © 2019 American Physical Society
URI
https://pr.ibs.re.kr/handle/8788114/5338
ISSN
2469-9950
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
2019-265_Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film.pdfDownload

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