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강상관계물질연구단
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Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film

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dc.contributor.authorSoonmin Kang-
dc.contributor.authorYi Tseng-
dc.contributor.authorBeom Hyun Kim-
dc.contributor.authorSeokhwan Yun-
dc.contributor.authorByungmin Sohn-
dc.contributor.authorBongju Kim-
dc.contributor.authorDaniel McNally-
dc.contributor.authorEugenio Paris-
dc.contributor.authorChoong H. Kim-
dc.contributor.authorChangyoung Kim-
dc.contributor.authorTae Won Noh-
dc.contributor.authorSumio Ishihara-
dc.contributor.authorThorsten Schmitt-
dc.contributor.authorJe-Geun Park-
dc.date.available2019-01-30T01:57:25Z-
dc.date.created2019-01-28-
dc.date.issued2019-01-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5338-
dc.description.abstractThe electronic structure of SrRuO3 thin film with a thickness from 1 to 50 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that the orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition occurring in the 4-u.c. sample. From these two clear observations we conclude that the QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters. © 2019 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleOrbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000455056300004-
dc.identifier.scopusid2-s2.0-85059889675-
dc.identifier.rimsid66781-
dc.contributor.affiliatedAuthorSoonmin Kang-
dc.contributor.affiliatedAuthorSeokhwan Yun-
dc.contributor.affiliatedAuthorByungmin Sohn-
dc.contributor.affiliatedAuthorBongju Kim-
dc.contributor.affiliatedAuthorChoong H. Kim-
dc.contributor.affiliatedAuthorChangyoung Kim-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.contributor.affiliatedAuthorJe-Geun Park-
dc.identifier.doi10.1103/PhysRevB.99.045113-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.99, no.4, pp.045113-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume99-
dc.citation.number4-
dc.citation.startPage045113-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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