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Highly fluidic liquid at homointerface generates grain-boundary dislocation arrays for high-performance bulk thermoelectrics

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Title
Highly fluidic liquid at homointerface generates grain-boundary dislocation arrays for high-performance bulk thermoelectrics
Author(s)
Hyeona Mun; Kyu Hyoung Lee; Seung Jo Yoo; Hyun-Sik Kim; Jiwon Jeong; Sang Ho Oh; G. Jeffrey Snyder; Young Hee Lee; Young-Min Kim; Sung Wng Kim
Subject
Thermoelectrics, ; Thermal conductivity, ; Dislocation arrays, ; Grain-boundary, ; Homointerface
Publication Date
2018-10
Journal
ACTA MATERIALIA, v.159, pp.266 - 275
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
Dislocation arrays embedded in low-angle grain-boundaries have emerged as an effective structural defect for a dramatic improvement of thermoelectric performance by reducing thermal conductivity [1] A transient liquid-flow assisted compacting process has been employed for p-type Bi0.5Sb1.5Te3 material to generate the dislocation arrays at grain-boundaries. The details of underlying formation mechanism are crucial for the feasibility of the process on other state-of-the-art thermoelectric materials but have not been well understood. Here, we report the direct observation of dislocation formation process at grain-boundaries of Sb2Te3 system as a proof-of-concept material. We found that the formation of homointerface between Te-terminated Sb2Te3 matrix phase and Te liquid atomic-layer of secondary phase is a prerequisite factor to achieve the low-energy liquid-solid homointerface at compacting elevated temperature. We further demonstrate from the successful observations of atomic structure in the intermediate state of the compacted pellet that the high self-diffusion rate of Te atoms at the liquid-solid homointerface facilitates an effective grain rearrangement, generating low-energy grain-boundaries embedded with dense dislocation arrays. These results pave the way to improve thermoelectric performance of various materials where dislocation arrays are generated by transient liquid-flow assisted compacting process using precursors with an interface constructed with the same types of atoms. (C) 2018 Published by Elsevier Ltd on behalf of Acta Materialia Inc
URI
https://pr.ibs.re.kr/handle/8788114/5144
DOI
10.1016/j.actamat.2018.08.027
ISSN
1359-6454
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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