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Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure

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Title
Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure
Author(s)
Chulho Park; Ngoc Thanh Duong; Seungho Bang; Duc Anh Nguyen; Hye Min Oh; Mun Seok Jeong
Publication Date
2018-11
Journal
NANOSCALE, v.10, no.43, pp.20306 - 20312
Publisher
ROYAL SOC CHEMISTRY
Abstract
Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regimes. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms - direct tunneling, Fowler-Nordheim tunneling, and the space charge region - depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (? 0.56), power conversion (? 1.5%), and external quantum efficiency (? 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices. © 2018 The Royal Society of Chemistry
URI
https://pr.ibs.re.kr/handle/8788114/5095
DOI
10.1039/c8nr07219a
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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