Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Cited 0 time in webofscience Cited 0 time in scopus
29 Viewed 3 Downloaded
Title
Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
Author(s)
Joo Song Lee; Soo Ho Choi; Seok Joon Yun; Yong In Kim; Stephen Boandoh; Ji-Hoon Park; Bong Gyu Shin; Hayoung Ko; Seung Hee Lee; Young-Min Kim; Young Hee Lee; Ki Kang Kim; Soo Min Kim
Publication Date
2018-11
Journal
SCIENCE, v.362, no.6416, pp.817 - 821
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Abstract
Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide. © The Authors.
URI
https://pr.ibs.re.kr/handle/8788114/5078
ISSN
0036-8075
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Wafer-scale single_Science_Young Hee Lee.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse