Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2

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Title
Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2
Author(s)
Songhee Choi; Sung-jin Chang; Junhyeob Oh; Jae Hyuck Jang; Shinbuhm Lee
Publication Date
2018-04
Journal
ADVANCED ELECTRONIC MATERIALS, v.4, no.6, pp.1700620-1 - 1700620-6
Publisher
WILEY
Abstract
Vanadium dioxide (VO2) polymorphs have many interesting physical and chemical properties that are crystal-structure dependent. It is reported that polymorphic (010) VO2(M1), (100) VO2(A), and (100) VO2(B) can be epitaxially grown on (001)-, (011)-, and (111)-oriented Y-stabilized ZrO2 (YSZ), respectively. While VO2(M1) shows a typical metal-insulator transition near 68 degrees C, and VO2(B) exhibits insulating behavior, the resistivity of VO2(A) is lower by three orders of magnitude than that of (100) VO2(A) epitaxial films previously grown on (011) SrTiO3. Ellipsometry reveals that the bandgap of VO2(A) also decreases. Each VO2 polymorphic film grown on cost-effective YSZ will be of great interest for numerous electronic and energy applications © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/5027
ISSN
2199-160X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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