IBS Publications Repository: Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2

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IBS Publications RepositoryCenter for Correlated Electron Systems(강상관계 물질 연구단)1. Journal Papers (저널논문)

Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2

DC Field	Value	Language
dc.contributor.author	Songhee Choi	-
dc.contributor.author	Sung-jin Chang	-
dc.contributor.author	Junhyeob Oh	-
dc.contributor.author	Jae Hyuck Jang	-
dc.contributor.author	Shinbuhm Lee	-
dc.date.available	2018-12-13T13:28:37Z	-
dc.date.created	2018-07-23	-
dc.date.issued	2018-04	-
dc.identifier.issn	2199-160X	-
dc.identifier.uri	https://pr.ibs.re.kr/handle/8788114/5027	-
dc.description.abstract	Vanadium dioxide (VO2) polymorphs have many interesting physical and chemical properties that are crystal-structure dependent. It is reported that polymorphic (010) VO2(M1), (100) VO2(A), and (100) VO2(B) can be epitaxially grown on (001)-, (011)-, and (111)-oriented Y-stabilized ZrO2 (YSZ), respectively. While VO2(M1) shows a typical metal-insulator transition near 68 degrees C, and VO2(B) exhibits insulating behavior, the resistivity of VO2(A) is lower by three orders of magnitude than that of (100) VO2(A) epitaxial films previously grown on (011) SrTiO3. Ellipsometry reveals that the bandgap of VO2(A) also decreases. Each VO2 polymorphic film grown on cost-effective YSZ will be of great interest for numerous electronic and energy applications © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	-
dc.description.uri	1	-
dc.language	영어	-
dc.publisher	WILEY	-
dc.subject	electrical resistivity	-
dc.subject	epitaxial films	-
dc.subject	optical conductivity	-
dc.subject	VO2 polymorphs	-
dc.subject	Y-stabilized ZrO2	-
dc.title	Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2	-
dc.type	Article	-
dc.type.rims	ART	-
dc.identifier.wosid	000434944500005	-
dc.identifier.scopusid	2-s2.0-85046087349	-
dc.identifier.rimsid	64084	-
dc.contributor.affiliatedAuthor	Sung-jin Chang	-
dc.identifier.doi	10.1002/aelm.201700620	-
dc.identifier.bibliographicCitation	ADVANCED ELECTRONIC MATERIALS, v.4, no.6, pp.1700620-1 - 1700620-6	-
dc.citation.title	ADVANCED ELECTRONIC MATERIALS	-
dc.citation.volume	4	-
dc.citation.number	6	-
dc.citation.startPage	1700620-1	-
dc.citation.endPage	1700620-6	-
dc.embargo.liftdate	9999-12-31	-
dc.embargo.terms	9999-12-31	-
dc.description.journalClass	1	-
dc.description.journalRegisteredClass	scie	-
dc.description.journalRegisteredClass	scopus	-
dc.subject.keywordPlus	METAL-INSULATOR-TRANSITION	-
dc.subject.keywordPlus	PHASE-TRANSITION	-
dc.subject.keywordPlus	VANADIUM DIOXIDE	-
dc.subject.keywordPlus	THIN-FILMS	-
dc.subject.keywordAuthor	electrical resistivity	-
dc.subject.keywordAuthor	epitaxial films	-
dc.subject.keywordAuthor	optical conductivity	-
dc.subject.keywordAuthor	VO2 polymorphs	-
dc.subject.keywordAuthor	Y-stabilized ZrO2	-