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나노 구조 물리 연구단
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Misorientation-Angle-Dependent Phase Transformation in van der Waals Multilayers via Electron-Beam Irradiation

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Title
Misorientation-Angle-Dependent Phase Transformation in van der Waals Multilayers via Electron-Beam Irradiation
Author(s)
Un Jeong Kim; Hyangsook Lee; Woojin Lee; Hye Yun Jeong; Hyun Kim; Gang Hee Han; Hyo Sug Lee; Yeonsang Park; Young‐Geun Roh; Young Hee Lee; Eunha Lee; Sung Woo Hwang
Publication Date
2018-05
Journal
ADVANCED MATERIALS, v.30, no.20, pp.1706864 -
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Misorientation-angle dependence on layer thickness is an intriguing feature of van der Waals materials, which causes stark optical gain and electrical transport modulation. However, the influence of misorientation angle on phase transformation is not determined yet. Herein, this phenomenon in a MoS2 multilayer via in situ electron-beam irradiation is reported. An AA-stacked MoS2 bilayer undergoes structural transformation from the 2H semiconducting phase to the 1T metallic phase, similar to a MoS2 monolayer, which is confirmed via in situ transmission electron microscopy. Moreover, non-AA stacking, which has no local AA stacking order in the Moire pattern, does not reveal such a phase transformation. While a collective sliding motion of chalcogen atoms easily occurs during the transformation in AA stacking, in non-AA stacking it is suppressed by the weak van der Waals strength and by the chalcogen atoms interlocked at different orientations, which disfavor their kinetics by the increased entropy of mixing © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/4530
ISSN
0935-9648
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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