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Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

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Title
Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate
Author(s)
Kisu Lee; Taeyoung Lee; Sang Mo Yang; D. H. Lee; Jae Hyo Park; Seungchul Chae
Publication Date
2018-05
Journal
APPLIED PHYSICS LETTERS, v.112, no.20, pp. -
Publisher
AMER INST PHYSICS
Abstract
We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures. © 2018 Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/4516
ISSN
0003-6951
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Center for Nanoparticle Research(나노입자 연구단) > Journal Papers (저널논문)
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