BROWSE

Related Scientist

Researcher

원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
more info

Atomically Abrupt Topological p-n Junction

Cited 4 time in webofscience Cited 0 time in scopus
149 Viewed 2 Downloaded
Title
Atomically Abrupt Topological p-n Junction
Author(s)
Sung Hwan Kim; Kyung-Hwan Jin; Byung Woo Kho; Byeong-Gyu Park; Feng Liu; Jun Sung Kim; Han Woong Yeom
Publication Date
2017-10
Journal
ACS Nano, v.11, no.10, pp.9671 - 9677
Publisher
AMER CHEMICAL SOC
Abstract
Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Interesting electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well-defined topological p-n junctions with the scalability down to atomic dimensions. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/4049
ISSN
1936-0851
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
Files in This Item:
201711. ACSNano_단장(교신)Atomically Abrupt Topological p–n Junction.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse