Atomically Abrupt Topological p-n Junction

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dc.contributor.authorSung Hwan Kim-
dc.contributor.authorKyung-Hwan Jin-
dc.contributor.authorByung Woo Kho-
dc.contributor.authorByeong-Gyu Park-
dc.contributor.authorFeng Liu-
dc.contributor.authorJun Sung Kim-
dc.contributor.authorHan Woong Yeom-
dc.date.available2017-12-14T05:33:12Z-
dc.date.created2017-12-12-
dc.date.issued2017-10-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4049-
dc.description.abstractTopological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Interesting electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well-defined topological p-n junctions with the scalability down to atomic dimensions. © 2017 American Chemical Society-
dc.languageENG-
dc.publisherAMER CHEMICAL SOC-
dc.titleAtomically Abrupt Topological p-n Junction-
dc.typeArticle-
dc.type.rimsA-
dc.identifier.wosid000413992800008-
dc.identifier.scopusid2-s2.0-85033219409-
dc.description.wostc4-
dc.date.tcdate2018-10-01-
dc.date.scptcdate2018-10-01-
dc.subject.keywordangle-resolved photoemission spectroscopy-
dc.subject.keywordscanning tunneling microscopy/spectroscopy-
dc.subject.keywordtopological insulator-
dc.subject.keywordtopological p-n junction-
dc.subject.keywordultrathin Sb film-
dc.contributor.affiliatedAuthorSung Hwan Kim-
dc.contributor.affiliatedAuthorHan Woong Yeom-
dc.identifier.bibliographicCitationACS NANO, v.11, no.10, pp.9671 - 9677-
dc.description.scptc4-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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