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나노 구조 물리 연구단
나노구조물리 연구단
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A Novel and Facile Route to Synthesize Atomic-Layered MoS2 Film for Large-Area Electronics

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Title
A Novel and Facile Route to Synthesize Atomic-Layered MoS2 Film for Large-Area Electronics
Author(s)
Stephen Boandoh; Soo Ho Choi; Ji‐Hoon Park; So Young Park; Seungho Bang; Mun Seok Jeong; Joo Song Lee; Hyeong Jin Kim; Woochul Yang; Jae‐Young Choi; Soo Min Kim; Ki Kang Kim
Publication Date
2017-10
Journal
SMALL, v.13, no.39, pp.1701306 -
Publisher
WILEY-V C H VERLAG GMBH
Abstract
High-quality and large-area molybdenum disulfide (MoS2) thin film is highly desirable for applications in large-area electronics. However, there remains a challenge in attaining MoS2 film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few-layered MoS2 film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)(6)) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS2 film is readily achievable in 20 min. Large-area MoS2 field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm(2) V-1 s(-1), which is the highest reported for bottom-gated MoS2-FETs fabricated via photolithography with an on/off ratio of approximate to 10(5) at room temperature © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/4020
ISSN
1613-6810
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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