Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

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Title
Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
Author(s)
Byoung Ki Choi; Minu Kim; Kwang-Hwan Jung; Jwasoon Kim; Kyu-Sang Yu; Young Jun Chang
Publication Date
2017-08
Journal
Nanoscale Research Letters, v.12, no., pp.492 -
Publisher
SPRINGER
Abstract
We report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. Fitting with the vibronic model of Huang and Rhys indicates that the constant thermal expansion accounts for the steady decrease of band gap. We also directly probe both optical and stoichiometric changes across the decomposition temperature, which should be useful for developing high-temperature electronic devices and fabrication process with the similar metal chalcogenide films. © 2017, The Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/3849
ISSN
1931-7573
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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