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Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

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dc.contributor.authorByoung Ki Choi-
dc.contributor.authorMinu Kim-
dc.contributor.authorKwang-Hwan Jung-
dc.contributor.authorJwasoon Kim-
dc.contributor.authorKyu-Sang Yu-
dc.contributor.authorYoung Jun Chang-
dc.date.available2017-10-17T00:27:04Z-
dc.date.created2017-09-25-
dc.date.issued2017-08-
dc.identifier.issn1556-276X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3849-
dc.description.abstractWe report on a temperature-dependent band gap property of epitaxial MoSe2 ultrathin films. We prepare uniform MoSe2 films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. Fitting with the vibronic model of Huang and Rhys indicates that the constant thermal expansion accounts for the steady decrease of band gap. We also directly probe both optical and stoichiometric changes across the decomposition temperature, which should be useful for developing high-temperature electronic devices and fabrication process with the similar metal chalcogenide films. © 2017, The Author(s)-
dc.description.uri1-
dc.language영어-
dc.publisherSPRINGER-
dc.subjectMolecular beam epitaxy-
dc.subjectMoSe2-
dc.subjectSpectroscopic ellipsometry-
dc.subjectTemperature-dependent band gap-
dc.subjectThermal stability-
dc.subjectTime of flight medium-energy ion-scattering spectroscopy-
dc.titleTemperature dependence of band gap in MoSe2 grown by molecular beam epitaxy-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000407691900002-
dc.identifier.scopusid2-s2.0-85027690187-
dc.identifier.rimsid60355ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorMinu Kim-
dc.identifier.doi10.1186/s11671-017-2266-7-
dc.identifier.bibliographicCitationNANOSCALE RESEARCH LETTERS, v.12, pp.492-
dc.citation.titleNANOSCALE RESEARCH LETTERS-
dc.citation.volume12-
dc.citation.startPage492-
dc.date.scptcdate2018-10-01-
dc.description.wostc4-
dc.description.scptc4-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorMolecular beam epitaxy-
dc.subject.keywordAuthorMoSe2-
dc.subject.keywordAuthorSpectroscopic ellipsometry-
dc.subject.keywordAuthorTemperature-dependent band gap-
dc.subject.keywordAuthorThermal stability-
dc.subject.keywordAuthorTime of flight medium-energy ion-scattering spectroscopy-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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