LOW-TEMPERATURE OHMIC CONTACT TO MONOLAYER MOS2 BY VAN DER WAALS BONDED CO/H-BN ELECTRODES Highly Cited Paper Hot Paper

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Title
LOW-TEMPERATURE OHMIC CONTACT TO MONOLAYER MOS2 BY VAN DER WAALS BONDED CO/H-BN ELECTRODES
Author(s)
Xu Cui; En-Min Shih; Luis A. Jauregui; Sang Hoon Chae; Young Duck Kim; Baichang Li; Dongjea Seo; Kateryna Pistunova; Jun Yin; Ji-Hoon Park; Heon-Jin Choi; Young Hee Lee; Kenji Watanabe; Takashi Taniguchi; Philip Kim; Cory R. Dean; James C. Hone
Publication Date
2017-08
Journal
NANO LETTERS, v.17, no.8, pp.4781 - 4786
Publisher
AMER CHEMICAL SOC
Abstract
Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve lowerature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kÎ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3821
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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