Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer

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Title
Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer
Author(s)
Manh Ha Doan; Youngjo Jin; Subash Adhikari; Sanghyub Lee; Jiong Zhao; Seong Chu Lim; Young Hee Lee
Publication Date
2017-04
Journal
ACS NANO, v.11, no.4, pp.3832 - 3840
Publisher
AMER CHEMICAL SOC
Abstract
Despite numerous studies on two-dimensional van der Waals heterostructures, a full understanding of the charge transport and photoinduced current mechanisms in these structures, in particular, associated with charge depletion/inversion layers at the interface remains elusive. Here, we investigate transport properties of a prototype multilayer MoS2/WSe2 heterojunction via a tunable charge inversion/depletion layer. A charge inversion layer was constructed at the surface of WSe2 due to its relatively low doping concentration compared to that of MoS2, which can be tuned by the back-gate bias. The depletion region was limited within a few nanometers in the MoS2 side, while charges are fully depleted on the whole WSe2 side, which are determined by Raman spectroscopy and transport measurements. Charge transport through the heterojunction was influenced by the presence of the inversion layer and involves two regimes of tunneling and recombination. Furthermore, photocurrent measurements clearly revealed recombination and space-charge-limited behaviors, similar to those of the heterostructures built from organic semiconductors. This contributes to research of various other types of heterostructures and can be further applied for electronic and optoelectronic devices. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3740
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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