Long-Range Lattice Engineering of MoTe2 by a 2D Electride

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Title
Long-Range Lattice Engineering of MoTe2 by a 2D Electride
Author(s)
Sera Kim; Seunghyun Song; Jongho Park; Ho Sung Yu; Suyeon Cho; Dohyun Kim; Jaeyoon Baik; Duk-Hyun Choe; K. J. Chang; Young Hee Lee; Sung Wng Kim; Heejun Yang
Publication Date
2017-06
Journal
NANO LETTERS, v.17, no.6, pp.3363 - 3368
Publisher
AMER CHEMICAL SOC
Abstract
Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to similar to 1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N](+)e to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 x 10(14) cm(2) and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metalsemiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N](+)e . The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3666
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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