Possible electric field induced indirect to direct band gap transition in MoSe2

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Title
Possible electric field induced indirect to direct band gap transition in MoSe2
Author(s)
Beom Seo Kim; Wonshik Kyung; Jeongjin Seo; J. Y. Kwon; J. D. Denlinger; Changyoung Kim; S. R. Park
Publication Date
2017-07
Journal
SCIENTIFIC REPORTS, v.7, no.1, pp.5206 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2 that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials. © 2017 The Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/3652
ISSN
2045-2322
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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