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강상관계물질연구단
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Possible electric field induced indirect to direct band gap transition in MoSe2

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dc.contributor.authorBeom Seo Kim-
dc.contributor.authorWonshik Kyung-
dc.contributor.authorJeongjin Seo-
dc.contributor.authorJ. Y. Kwon-
dc.contributor.authorJ. D. Denlinger-
dc.contributor.authorChangyoung Kim-
dc.contributor.authorS. R. Park-
dc.date.available2017-09-05T04:51:35Z-
dc.date.created2017-08-29-
dc.date.issued2017-07-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3652-
dc.description.abstractDirect band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2 that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials. © 2017 The Author(s)-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.titlePossible electric field induced indirect to direct band gap transition in MoSe2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000405425000010-
dc.identifier.scopusid2-s2.0-85024108751-
dc.identifier.rimsid60029ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorBeom Seo Kim-
dc.contributor.affiliatedAuthorWonshik Kyung-
dc.contributor.affiliatedAuthorJeongjin Seo-
dc.contributor.affiliatedAuthorJ. Y. Kwon-
dc.contributor.affiliatedAuthorChangyoung Kim-
dc.identifier.doi10.1038/s41598-017-05613-5-
dc.identifier.bibliographicCitationSCIENTIFIC REPORTS, v.7, no.1, pp.5206-
dc.citation.titleSCIENTIFIC REPORTS-
dc.citation.volume7-
dc.citation.number1-
dc.citation.startPage5206-
dc.date.scptcdate2018-10-01-
dc.description.wostc1-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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