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나노 구조 물리 연구단
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Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

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Title
Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors
Author(s)
Byung Chul Lee; Chul Min Kim; Ho-Kyun Jang; Jae Woo Lee; Min-Kyu Joo; Gyu-Tae Kim
Publication Date
2017-10
Journal
APPLIED SURFACE SCIENCE, v.419, no.2017, pp.637 - 641
Publisher
ELSEVIER SCIENCE BV
Abstract
Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field–effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively. © 2017 Published by Elsevier B.V.
URI
https://pr.ibs.re.kr/handle/8788114/3639
ISSN
0169-4332
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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