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나노물질 및 화학반응 연구단
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Annihilation behavior of planar defects on phosphorus-doped silicon at low temperatures

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Title
Annihilation behavior of planar defects on phosphorus-doped silicon at low temperatures
Author(s)
Im D.-H.; Yong In Kim; Myoungho Jeong; Kwang Wuk Park; Sung Kyu Kim; Yuk J.M.; Woo Hyun Nam; Sang Yun Kim; Lee K.-S.; Im K.-V.; Lim H.; Jeong Yong Lee
Publication Date
2017-05
Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3370 - 3374
Publisher
AMER SCIENTIFIC PUBLISHERS
Abstract
The planar defect behavior and phosphorus (P) diffusion of P-doped silicon (Si) thin film on monocrystalline Si with annealing was investigated by high-resolution transmission electron microscopy. These images indicate that the as-deposited Si thin film crystallizes with many planar defects, such as stacking faults and twin boundaries. Secondary ion mass spectroscopy and atom probe tomography reveal that P atoms are segregated to the planar defects and diffuse out the Si substrate at 600 °C. The solubility of P atoms has an influence on the rearrangement of Si atoms, which leads to the annihilation of the defects in the deposited Si thin film. © Copyright 2017 American Scientific Publishers All rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/3608
ISSN
1533-4880
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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